Dielectric properties of thin films based on cerium oxide (CeO2).

by Ziad Tarik Al-Dhhan

Publisher: Brunel University in Uxbridge

Written in English
Published: Pages: 139 Downloads: 712
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Edition Notes

ContributionsBrunel University. Department of Physics.
The Physical Object
Pagination139p. :
Number of Pages139
ID Numbers
Open LibraryOL20756550M

Investigation on the improved electrical and optical properties of trivalent boron-doped Cu 2 O thin film and fabrication of Cu 2 O: enhancement of the electrical conductivity and dielectric properties. Superionic conductive La 3+ and Pr 3+ Co-doped cerium oxide for IT-SOFC applications. +f Dielectric thin films – r Electrical properties of specific thin films – z Methods of deposition of films and coatings; film growth and epitaxy 1Introduction Scaling and gate capacitance The most important electronic device is the complemen-tary metal oxide semiconductor (CMOS) field effect tran-.   Praseodymium-Cerium Oxide (Pr x Ce 1-x O 2−δ; PCO), a potential three way catalyst oxygen storage material and solid oxide fuel cell (SOFC) cathode, exhibits surprisingly high levels of oxygen nonstoichiometry, even under oxidizing (e.g. air) conditions, resulting in mixed ionic electronic conductivity (MIEC).In this study we examine the redox kinetics of dense PCO thin films using Cited by: OPTICAL PROPERTIES OF DIELECTRIC AND SEMICONDUCTOR THIN FILMS 3 Analytic solutions can be given if we assume that the incident wave is a pure wave and that the boundary layers are regular. In more complicated situations, numerical solutions are nec-.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride, Appl. Opt. 51, () (Numerical data kindly provided by Jan Kischkat) Data [CSV - comma separated] [TXT - tab separated] [Full database record] Optical transmission calculator. Researchers "doped" BST thin films with magnesium, analyzing the "structure, microstructure, surface morphology and film/substrate compositional quality" of the result. The Mg doped BST films showed "improved dielectric properties, low leakage current, and good tunability", meriting potential for use in microwave tunable devices.   The zirconium thin film with a lanthanum (La) concentration of x = showed a sharp decreased k-value and suffered from a severe dielectric relaxation. A k value of 39 was obtained at Hz, but this value was reduced to a k value of 19 at 1 MHz. The 10% Ce-doped hafnium thin film also had a k value change from 33 at Hz to 21 at 1 by: @article{osti_, title = {Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles}, author = {Kononov, N. N., E-mail: [email protected] and Dorofeev, S G and Ishchenko, A A and Mironov, R A and Plotnichenko, V G and Dianov, E M}, abstractNote = {Dielectric properties of thin films precipitated on solid substrates from colloidal solutions.

Background. As the thickness of SiO 2 gate dielectric films used in complementary metal oxide semiconductor (CMOS) devices is reduced toward 1 nm, the gate leakage current level becomes unacceptable [].Extensive efforts have been focused on finding alternative gate dielectrics for future technologies to overcome leakage problems [].Oxide materials with large dielectric constants (so Cited by: Metal & Dielectric Depositions ECI deposits a wide variety of metal and dielectric materials onto glass, semiconductor, plastic, fiberoptic or metal substrates to customer specification. Take advantage of our free in-house thin film design services for a design optimized to your specifications or provide us with the coating design or film.

Dielectric properties of thin films based on cerium oxide (CeO2). by Ziad Tarik Al-Dhhan Download PDF EPUB FB2

Dielectric Properties of Thin Films Based on Cerium Dioxide and Tellurium Dioxide: Authors: A study of the electrical condition mechanism and optical absorption in a number of co-evaporated amorphous oxide thin films and glasses has been made.

The infra-red absorption study suggests the presence of Ce-O-Te linkages in the CeO_2/TeO _2. Banyamin prepared FTO thin films by magnetron sputtering technique, from their analysis, the carrier concentration of undoped tin oxide was × 10 18 cm −3 and doped film exhibited × 10 20 cm −3. The increasing value may be due to fluorine atom which generates free electron when it was placed in oxygen site.

Cerium oxide (CeO2) thin films were deposited on Pt ()/Ti/SiO2/Si() substrates using pulsed laser deposition method at different temperatures such as, K, K and K with 3 × 10−2 mbar oxygen partial pressure.

The prepared films were systematically investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and electrical Cited by: 1. Affiliations. Department of Physics, Muffakham Jah College of Engineering and Technology, Road No.

3, Banjara Hills,Hyderabad, India. Chandra ShekarCited by: 6. Based on the optical properties, the electrical conduction mechanisms in CeO 2 thin films are determined to be Schottky emission in a medium electric field (– MV cm −1) from to K and Poole–Frenkel emission in a high electric field (> MV cm −1) from to by: Cerium oxide (CeO2) thin films were deposited on Pt ()/Ti/SiO2/Si() substrates using pulsed laser deposition method at different temperatures such as, K, K and K with 3 × Thin-film BaTiO3 has been prepared for the first time by spray pyrolysis.

Both smooth and highly porous films were deposited depending on deposition temperature and rate. As-deposited films contained an unidentified, low-symmetry barium titanate modification.

Annealing at − °C converted the films to the cubic phase, while annealing at °C produced the tetragonal phase and an Cited by: Based on the optical properties, the electrical conduction mechanisms in CeO 2 thin films are determined to be Schottky emission in a medium electric field (– MV cm −1) from to K and Poole–Frenkel emission in a high electric field (> MV cm −1) from to : Chih-Ming Lai.

Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O 2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates.

The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD).Author: Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski. Abstract: Thin film silicon oxide capacitors with nonshorting breakdowns were investigated.

Breakdowns appear in three forms: single hole, self-propagating, and maximum voltage breakdowns. Single hole and self-propagating breakdowns occur at flaws, and self-propagating breakdowns develop only when the resistor to the source is relatively small, less than 10 kΩ in these experiments.

Cerium dioxide (CeO2) exhibits exceptional electronic properties such as optical transparency and high refractive index (n) and high dc dielectric constant (k).

Therefore, it is an attractive material for ultra-thin gate oxide in CMOS technology, where high- k dielectrics are by: Optical and electrical characterizations of cerium oxide thin films Lossy Mode Resonance-Based Glucose Sensor with High- Dielectric Film Lin et al- 08, respectively.

Based on the optical properties, the electrical conduction mechanisms in CeO 2 thin films are determined toCited by: The properties of thin films are strongly influenced by the deposition parameters and conditions, i.e., they are strongly related to the coating technologies described in Chap.

The dielectric properties of LaF3 films evaporated by electron beam have been studied in the audio-frequency range (–30 kHz) at different temperatures (– K). Multifunctional Piezoelectric Metal Oxide Nanostructures reviews multifunctional piezoelectric oxides growth, thin films, composite films, interfacial doping effects, energy harvesting devices, and battery-free sensors.

The book bridges the connection between the theoretical and experiments aspects of piezoelectric oxides. Abstract: The thickness and temperature dependence of the CeO 2 dielectric reliability characteristics of metal-oxide-semiconductor capacitors is studied. The dielectric breakdown strength (E bd) of CeO 2 thin films decreases with increasing temperature.

The Weibull slope of the charge-to-breakdown (Q bd) statistics is a function of the dielectric by: 1 Structural, Chemical and Optical Properties of Cerium Dioxide Film Prepared by Atomic Layer Deposition on TiN and Si Substrates S. Vangelista 1, R. Piagge2, S. Ek3,T. Sarnet3, G.

Ghidini2, C. Martella and A. Lamperti1 1CNR -IMM MDM Laboratory, Via C. Cited by: The objective of the present investigation was to investigate the effect of conventional annealing and microwave irradiation on the structural, optical and dielectric properties of SiO 2 –TiO 2 thin film developed by sol gel technique.

SiO 2 –TiO 2 thin film prepared using spin coater with optimized conditions, then heat treated by conventional annealing and microwave : Krishna Munishamaiah.

Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of °C, °C, °C, °C, and °C, respectively. CeO2 were grown on n-Si() wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X Cited by: Nanocrystalline cerium oxide films were effectively synthesized on glass substrates via hydrothermal and dip coating techniques at various calcination temperatures (C T) from to °C.

Impact of C T on the structure, surface morphology, optical and photoluminescence (PL) properties of cerium oxide (CeO x) films has been : Fawzy G. El Desouky, M.M. Saadeldin, Manal A.

Mahdy, S.M. Abd El Wahab, I.K. El Zawawi. Dielectric Properties of Thin Films Based on Ceric - Authors: Al-Dhhan, Ziad Tarik and the absorption edge of thin film samples prepared by vacuum evaporation, is presented.

DC electrical measurements have been carried out on thin co-evaporated CeO_2, CeO _2/SiO, CeO_2/GeO _2 and CeO_2/SnO _2 films both before and after an electroforming.

Cerium Oxide (CeO2): Synthesis, Properties and Applications provides an updated and comprehensive account of the research in the field of cerium oxide based materials. The book is divided into three main blocks that deal with its properties, synthesis and applications.

Moreover, in the present study, the dielectric and optical properties of MgO thin films prepared by spray pyrolysis were investigated at different substrate temperatures ( – C) and at con.

Reliability characteristics of cerium dioxide thin films was investigated using Hf-based gate dielectric stacks of varying physical thickness with polysilicon electrodes. amorphous indium. PZT-based ferroelectric thin films are expected to produce high output energy due to high piezoelectric coefficients.

However, for certain lead-free thin films, such as AlN, the output energy is very much equivalent to PZT thin films, possibly due to the low dielectric constant of AlN thin by: Subsequent chapters focus on the unique role played by piezoelectric films in signal processing devices utilizing bulk or surface acoustic waves; the properties and applications of ferroelectric films in integrated electronics; and the underlying physics and chemistry of electrochromic tungsten-oxide-based thin films.

This book should be of Format: Hardcover. Cerium oxide (CeO 2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of °C, °C, °C, °C, and °C, 2 were grown on n-Si() ions in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X Cited by:   Pulsed-laser deposition was employed to grow epitaxial thin films of the oxynitride perovskite BaTaO2N on a conducting SrRuO3 buffer layer deposited on a cut SrTiO3 single-crystal substrate.

Phase purity and epitaxy were optimized at a substrate temperature of °C in a mixed gas atmosphere of mTorr N2/O2 (∼).

The dielectric permittivity, κ, of the BaTaO2N film was Cited by: Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal–insulator–semiconductor (MIS) field-effect transistors.

Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient by: Application-Specific Oxide-Based and Metal–Dielectric Thin-Film Materials Prepared by Radio Frequency Magnetron Sputtering Mohammad Nur-E-Alam *, Wade Lonsdale, Mikhail Vasiliev and Kamal Alameh Electron Science Research Institute, School of Science, Edith Cowan University, Joondalup Drive, Joondalup,Cited by: 1.

of dielectric. The transparent dielectrics support interference in thin films. The short‐wave optical properties are dominated by electrons.

The positively charged parts of molecules become important further into the infrared. Macleod ‐Thin Film Optics 7File Size: 2MB.dielectric properties () Filter by: Remove filter: films () Filter by: Remove filter Oxide-based thin films and devices.

Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors. by Liu, Guoxia and Liu.Cerium (Ce) is one of the most abundant rare earth elements of the lanthanide series in earth’s crust and is present at about 66 ppm as a free metal and/or oxide forms.

The two main oxidation sates of cerium are ceric- Ce (IV) and cerous- Ce (III), and can auto regenerate (ε 0 C e (I V) C e (I I I) = ) [ 5 ].Cited by: